H5TQ4G63MFR-PBC Hynix

H5TQ4G63MFR-PBC - HYNIX の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

H5TQ4G63MFR-PBC の詳細情報

  • 仕様・詳細
  • メーカー情報
型番H5TQ4G63MFR-PBC
メーカーHYNIX
Access Mode MULTI BANK PAGE BURST
Access Time-Max (ns) 0.225
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (MHz) 800
DLA Qualification Not Qualified
I/O Type COMMON
Interleaved Burst Length 4,8
J-STD-609 Code e1
JESD-30 Code R-PBGA-B96
Length (mm) 13
Memory Density (bits) 4294967296
Memory IC Type DDR3 DRAM
Memory Organization 256MX16
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words (words) 268435456
Number of Words Code 256M
Operating Mode SYNCHRONOUS
Operating Temperature-Max (Cel) 85
Operating Temperature-Min (Cel) 0
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Peak Reflow Temperature (Cel) 260
Power Supplies (V) 1.5
Refresh Cycles 8192
Seated Height-Max (mm) 1.2
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max (A) 0.02
Sub Category DRAMs
Supply Current-Max (mA) 290
Supply Voltage-Max (V) 1.575
Supply Voltage-Min (V) 1.425
Supply Voltage-Nom (V) 1.5
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch (mm) 0.8
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width (mm) 9.4
会社名称SK HYNIX INC.
設立1983
所在地2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, KOREA
URLhttp://www.hynix.com/

H5TQ4G63MFR-PBCのレビュー

H5TQ4G63MFR-PBC のご注文について