H5TQ2G63DFR-H9C Hynix

H5TQ2G63DFR-H9C - HYNIX の商品詳細ページです。

1
H5TQ2G63DFR-H9C
  • H5TQ2G63DFR-H9C
  • H5TQ2G63DFR-H9C
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

H5TQ2G63DFR-H9C の詳細情報

  • 仕様・詳細
  • メーカー情報
型番H5TQ2G63DFR-H9C
メーカーHYNIX
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.255 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 667 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96
Length 13 mm
Memory Density 2147483648 bit
Memory IC Type DDR3 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 134217728 words
Number of Words Code 128M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 Cel
Operating Temperature-Min 0 Cel
Organization 128MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 1.5 V
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.012 Amp
Sub Category DRAMs
Supply Current-Max 0.225 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 7.5 mm
会社名称SK HYNIX INC.
設立1983
所在地2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, KOREA
URLhttp://www.hynix.com/

H5TQ2G63DFR-H9Cのレビュー

H5TQ2G63DFR-H9C のご注文について