H5MS1G62MFPJ3M データシート Hynix

H5MS1G62MFPJ3M - HYNIX の商品詳細ページです。

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H5MS1G62MFPJ3M の詳細情報

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型番H5MS1G62MFPJ3M
メーカーHYNIX
データシートProduct_list_pdf
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 12 mm
Memory Density 1073741824 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 67108864 words
Number of Words Code 64M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 Cel
Operating Temperature-Min -30 Cel
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA60,9X10,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Peak Reflow Temperature (Cel) 260
Power Supplies 1.8 V
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.0004 Amp
Sub Category DRAMs
Supply Current-Max 0.09 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 8 mm
会社名称SK HYNIX INC.
設立1983
所在地2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, KOREA
URLhttp://www.hynix.com/

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