H5DU5162ETR-E3C Hynix

H5DU5162ETR-E3C - HYNIX の商品詳細ページです。

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H5DU5162ETR-E3C の詳細情報

  • 仕様・詳細
  • メーカー情報
型番H5DU5162ETR-E3C
メーカーHYNIX
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e6
Length 12 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Min 0 Cel
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VBGA
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE Meter
Peak Reflow Temperature (Cel) 260
Power Supplies 2.6 V
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 Amp
Sub Category DRAMs
Supply Current-Max 0.26 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Bismuth (Sn98Bi2)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 8 mm
会社名称SK HYNIX INC.
設立1983
所在地2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, KOREA
URLhttp://www.hynix.com/

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