ユニジャンクショントランジスタ
| 型番 | 2SH20 | 
|---|---|
| メーカー | HITACHI | 
| 種別 | UJT トランジスタ | 
| Collector Current-Max (IC) | 36 A | 
| Collector-emitter Voltage-Max | 600 V | 
| Configuration | SINGLE | 
| Emitter Current-Max | 50 mA | 
| Gate-emitter Voltage-Max | 20 V | 
| Inter-base Voltage-Max | 55 V | 
| Intrinsic Stand-off Ratio-Max | 0.85 | 
| Intrinsic Stand-off Ratio-Min | 0.7 | 
| JESD-30 Code | R-PSFM-T3 | 
| JESD-609 Code | e0 | 
| Number of Elements | 1 | 
| Number of Terminals | 3 | 
| Operating Temperature-Max | 150 Cel | 
| Operating Temperature-Min | -65 Cel | 
| Package Body Material | PLASTIC/EPOXY | 
| Package Shape | RECTANGULAR | 
| Package Style | FLANGE MOUNT Meter | 
| Peak Point Current-Max | 3.5 mA | 
| Polarity/Channel Type | N-CHANNEL | 
| Power Dissipation-Max (Abs) | 0.25 W | 
| Qualification Status | Not Qualified | 
| Static Inter-base Res-Max | 12 kohm | 
| Static Inter-base Res-Min | 4 kohm | 
| Sub Category | Insulated Gate BIP Transistors | 
| Surface Mount | NO | 
| Terminal Finish | Tin/Lead (Sn/Pb) | 
| Terminal Form | THROUGH-HOLE | 
| Terminal Position | SINGLE | 
| Transistor Application | POWER CONTROL | 
| Transistor Element Material | SILICON | 
| Valley Point Current-Min | 6 mA | 
| 会社名称 | 株式会社 日立製作所 | 
|---|---|
| 設立 | 1920年2月1日 | 
| 資本金 | 458,790百万円 | 
| 所在地 | 100-8280 東京都千代田区丸の内一丁目6番6号 | 
| URL | http://www.hitachi.com/ | 
2SH20 - HITACHI の商品詳細ページです。