2SB859 C

Name: 2SB859 C
Brand: HITACHI
SKU: 30250676-0000-0000-0000

2SB859 C - HITACHI の商品詳細ページです。

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PNP型バイポーラトランジスタ | 低周波用

2SB859 C の詳細情報

型番	2SB859 C
メーカー	HITACHI
種別	バイポーラトランジスタ
Case Connection	COLLECTOR
Collector Current-Max (IC)	4 A
Collector-emitter Voltage-Max	80 V
Configuration	SINGLE
DC Current Gain-Min (hFE)	100
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	3
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	40 W
Qualification Status	Not Qualified
Sub Category	Other Transistors
Surface Mount	NO
Terminal Finish	TIN COPPER
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	20 MHz