2SB649

Name: 2SB649
Brand: HITACHI
SKU: 30253038-0000-0000-0000

2SB649 - HITACHI の商品詳細ページです。

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PNP型バイポーラトランジスタ | 低周波用

2SB649 の詳細情報

型番	2SB649
メーカー	HITACHI
種別	バイポーラトランジスタ
Case Connection	ISOLATED
Collector Current-Max (IC)	1.5 A
Collector-base Capacitance-Max	27 pF
Collector-emitter Voltage-Max	120 V
Configuration	SINGLE
DC Current Gain-Min (hFE)	30
JEDEC-95 Code	TO-126
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	3
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	PNP
Power Dissipation Ambient-Max	1 W
Power Dissipation-Max (Abs)	1 W
Qualification Status	Not Qualified
Sub Category	Other Transistors
Surface Mount	NO
Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	140 MHz
VCEsat-Max	1 V