RFP45N06LE Harris

RFP45N06LE - HARRIS の商品詳細ページです。

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RFP45N06LE の詳細情報

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型番RFP45N06LE
メーカーHARRIS
Additional Feature ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 45 A
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.028 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 142 W
Power Dissipation-Max (Abs) 142 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 185 ns
Turn-on Time-Max (ton) 215 ns
会社名称Harris Corporation
資本金1890s
所在地1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA
URLhttp://harris.com

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