RFP18N10 Harris

RFP18N10 - HARRIS の商品詳細ページです。

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RFP18N10 の詳細情報

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型番RFP18N10
メーカーHARRIS
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 18 A
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.1 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 450 ns
Turn-on Time-Max (ton) 540 ns
会社名称Harris Corporation
資本金1890s
所在地1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA
URLhttp://harris.com

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