RFD8P05SM データシート Harris

RFD8P05SM - HARRIS の商品詳細ページです。

1
No Image
2営業日以内に回答いたします

RFD8P05SM の詳細情報

  • 仕様・詳細
  • メーカー情報
型番RFD8P05SM
メーカーHARRIS
データシートProduct_list_pdf
Additional Feature MEGAFET
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (Abs) (ID) 8 A
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.3 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 48 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns
会社名称Harris Corporation
資本金1890s
所在地1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA
URLhttp://harris.com

RFD8P05SMのレビュー

RFD8P05SM のご注文について