RFD16N05SM データシート Harris

RFD16N05SM - HARRIS の商品詳細ページです。

1
No Image
2営業日以内に回答いたします

RFD16N05SM の詳細情報

  • 仕様・詳細
  • メーカー情報
型番RFD16N05SM
メーカーHARRIS
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (Abs) (ID) 16 A
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.047 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 72 W
Power Dissipation-Max (Abs) 72 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 125 ns
Turn-on Time-Max (ton) 65 ns
会社名称Harris Corporation
資本金1890s
所在地1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA
URLhttp://harris.com

RFD16N05SMのレビュー

RFD16N05SM のご注文について