| 型番 | RFD16N05SM |
|---|---|
| メーカー | HARRIS |
| データシート | ![]() |
| Additional Feature | AVALANCHE RATED |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 50 V |
| Drain Current-Max (Abs) (ID) | 16 A |
| Drain Current-Max (ID) | 16 A |
| Drain-source On Resistance-Max | 0.047 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 72 W |
| Power Dissipation-Max (Abs) | 72 W |
| Pulsed Drain Current-Max (IDM) | 45 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 125 ns |
| Turn-on Time-Max (ton) | 65 ns |
| 会社名称 | Harris Corporation |
|---|---|
| 資本金 | 1890s |
| 所在地 | 1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA |
| URL | http://harris.com |
RFD16N05SM - HARRIS の商品詳細ページです。