| 型番 | RFD12N06RLE |
|---|
| メーカー | HARRIS |
|---|
| データシート |  |
| Additional Feature |
MEGAFET, LOGIC LEVEL COMPATIBLE |
| Case Connection |
DRAIN |
| Configuration |
SINGLE |
| DS Breakdown Voltage-Min |
60 V |
| Drain Current-Max (Abs) (ID) |
12 A |
| Drain Current-Max (ID) |
12 A |
| Drain-source On Resistance-Max |
0.063 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code |
TO-251AA |
| JESD-30 Code |
R-PSIP-T3 |
| JESD-609 Code |
e0 |
| Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
| Number of Terminals |
2 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
IN-LINE Meter |
| Peak Reflow Temperature (Cel) |
260 |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation Ambient-Max |
40 W |
| Power Dissipation-Max (Abs) |
40 W |
| Pulsed Drain Current-Max (IDM) |
26 A |
| Qualification Status |
Not Qualified |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
NO |
| Terminal Finish |
MATTE TIN |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| Turn-off Time-Max (toff) |
60 ns |
| Turn-on Time-Max (ton) |
60 ns |
RFD12N06RLE - HARRIS の商品詳細ページです。