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型番 | RFD12N06RLE |
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メーカー | HARRIS |
データシート | |
Additional Feature | MEGAFET, LOGIC LEVEL COMPATIBLE |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 12 A |
Drain Current-Max (ID) | 12 A |
Drain-source On Resistance-Max | 0.063 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-251AA |
JESD-30 Code | R-PSIP-T3 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 40 W |
Power Dissipation-Max (Abs) | 40 W |
Pulsed Drain Current-Max (IDM) | 26 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 60 ns |
Turn-on Time-Max (ton) | 60 ns |
会社名称 | Harris Corporation |
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資本金 | 1890s |
所在地 | 1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA |
URL | http://harris.com |
RFD12N06RLE - HARRIS の商品詳細ページです。