| 型番 | RFD10P03LSM |
|---|
| メーカー | HARRIS |
|---|
| データシート |  |
| Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Case Connection |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
30 V |
| Drain Current-Max (Abs) (ID) |
10 A |
| Drain Current-Max (ID) |
10 A |
| Drain-source On Resistance-Max |
0.2 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code |
TO-252AA |
| JESD-30 Code |
R-PSSO-G2 |
| JESD-609 Code |
e0 |
| Number of Elements |
1 |
| Number of Terminals |
2 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
175 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Polarity/Channel Type |
P-CHANNEL |
| Power Dissipation Ambient-Max |
60 W |
| Power Dissipation-Max (Abs) |
60 W |
| Pulsed Drain Current-Max (IDM) |
25 A |
| Qualification Status |
Not Qualified |
| Sub Category |
Other Transistors |
| Surface Mount |
YES |
| Terminal Finish |
TIN LEAD |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| Turn-off Time-Max (toff) |
120 ns |
| Turn-on Time-Max (ton) |
110 ns |
RFD10P03LSM - HARRIS の商品詳細ページです。