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型番 | IRFF130 |
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メーカー | HARRIS |
Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 69 mJ |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (Abs) (ID) | 8 A |
Drain Current-Max (ID) | 8 A |
Drain-source On Resistance-Max | 0.18 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-205 |
JESD-30 Code | O-MBCY-W3 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL Meter |
Peak Reflow Temperature (Cel) | NOT APPLICABLE |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 25 W |
Power Dissipation-Max (Abs) | 25 W |
Pulsed Drain Current-Max (IDM) | 32 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | TIN LEAD |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 85 ns |
Turn-on Time-Max (ton) | 105 ns |
会社名称 | Harris Corporation |
---|---|
資本金 | 1890s |
所在地 | 1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA |
URL | http://harris.com |
IRFF130 - HARRIS の商品詳細ページです。