HUF76137S3S Harris

HUF76137S3S - HARRIS の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

HUF76137S3S の詳細情報

  • 仕様・詳細
  • メーカー情報
型番HUF76137S3S
メーカーHARRIS
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 75 A
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.009 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 145 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Harris Corporation
資本金1890s
所在地1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA
URLhttp://harris.com

HUF76137S3Sのレビュー

HUF76137S3S のご注文について