HGTG11N120CN データシート Harris

HGTG11N120CN - HARRIS の商品詳細ページです。

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HGTG11N120CN の詳細情報

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  • メーカー情報
型番HGTG11N120CN
メーカーHARRIS
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Case Connection COLLECTOR
Collector Current-Max (IC) 11 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 230 ns
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Qualification Status Not Qualified
Rise Time-Max (tr) 16 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 680 ns
Turn-off Time-Nom (toff) 210 ns
Turn-on Time-Max (ton) 40 ns
Turn-on Time-Nom (ton) 21 ns
VCEsat-Max 2.4 V
会社名称Harris Corporation
資本金1890s
所在地1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA
URLhttp://harris.com

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