5時間47分後
以内に見積もり依頼を頂ければ、
04月22日(月) 9:00
までに見積もり回答いたします。
型番 | 3N191 |
---|---|
メーカー | HARRIS |
データシート | |
Additional Feature | HIGH RELIABILITY |
Case Connection | SUBSTRATE |
Configuration | SEPARATE, 2 ELEMENTS |
DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (Abs) (ID) | 0.05 A |
Drain Current-Max (ID) | 0.05 A |
Drain-source On Resistance-Max | 300 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 1 pF |
JEDEC-95 Code | TO-78 |
JESD-30 Code | O-MBCY-W7 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 7 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 135 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | METAL |
Package Shape | RECTANGULAR |
Package Style | CYLINDRICAL Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 0.3 W |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | NO |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | UNSPECIFIED |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
会社名称 | Harris Corporation |
---|---|
資本金 | 1890s |
所在地 | 1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA |
URL | http://harris.com |
3N191 - HARRIS の商品詳細ページです。