3N191
データシート
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3N191 の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | 3N191 |
|---|---|
| メーカー | HARRIS |
| データシート |  |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | SUBSTRATE |
| Configuration | SEPARATE, 2 ELEMENTS |
| DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (Abs) (ID) | 0.05 A |
| Drain Current-Max (ID) | 0.05 A |
| Drain-source On Resistance-Max | 300 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 1 pF |
| JEDEC-95 Code | TO-78 |
| JESD-30 Code | O-MBCY-W7 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 7 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 135 Cel |
| Operating Temperature-Min | -55 Cel |
| Package Body Material | METAL |
| Package Shape | RECTANGULAR |
| Package Style | CYLINDRICAL Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.3 W |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | UNSPECIFIED |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| 会社名称 | Harris Corporation |
|---|---|
| 資本金 | 1890s |
| 所在地 | 1025 West NASA Boulevard Melbourne, Florida 32919-0001 USA |
| URL | http://harris.com |
3N191のレビュー
3N191 のご注文について
050-3612-7934
045-263-9989
3N191 - HARRIS の商品詳細ページです。