型番 | DF08M |
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メーカー | GI |
Additional Feature | HIGH RELIABILITY |
Breakdown Voltage-Min | 800 V |
Configuration | BRIDGE, 4 ELEMENTS |
Diode Element Material | SILICON |
Diode Type | BRIDGE RECTIFIER DIODE |
Forward Voltage-Max (VF) | 1 V |
JESD-30 Code | R-PDIP-T4 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 |
Non-rep Pk Forward Current-Max | 30 A |
Number of Elements | 4 |
Number of Phases | 1 |
Number of Terminals | 4 |
Operating Temperature-Max | 125 Cel |
Operating Temperature-Min | -65 Cel |
Output Current-Max | 1 A |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE Meter |
Peak Reflow Temperature (Cel) | 255 |
Power Dissipation-Max | 3.1 W |
Qualification Status | Not Qualified |
Reference Standard | UL RECOGNIZED |
Rep Pk Reverse Voltage-Max | 800 V |
Reverse Current-Max | 5.0E-6 uA |
Reverse Test Voltage | 800 V |
Sub Category | Bridge Rectifier Diodes |
Surface Mount | NO |
Technology | SCHOTTKY |
Terminal Finish | BRIGHT TIN |
Terminal Form | THROUGH-HOLE |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 10 |
会社名称 | Gi Technology Private Limited, |
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設立 | 2006 |
所在地 | C-9 Thiru-vi-ka Industrial Estate, Guindy, Chennai, Tamil Nadu 600032, India |
URL | http://www.gitechnology.in/ |
DF08M - GI の商品詳細ページです。