2KBP06M データシート Gi

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2KBP06M の詳細情報

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型番2KBP06M
メーカーGI
データシートProduct_list_pdf
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 600 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JESD-30 Code R-PSIP-T4
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 60 A
Number of Elements 4
Number of Phases 1
Number of Terminals 4
Operating Temperature-Max 125 Cel
Operating Temperature-Min -55 Cel
Output Current-Max 2 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 4.7 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 600 V
Reverse Current-Max 5.0E-6 uA
Reverse Test Voltage 600 V
Sub Category Bridge Rectifier Diodes
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
会社名称Gi Technology Private Limited,
設立2006
所在地C-9 Thiru-vi-ka Industrial Estate, Guindy, Chennai, Tamil Nadu 600032, India
URLhttp://www.gitechnology.in/

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