1N5397 Gi

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1N5397 の詳細情報

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型番1N5397
メーカーGI
Additional Feature FORMED LEAD OPTIONS ARE AVAILABLE
Application EFFICIENCY
Breakdown Voltage-Min 600 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 125 Cel
Operating Temperature-Min -65 Cel
Output Current-Max 1.5 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style LONG FORM Meter
Peak Reflow Temperature (Cel) 240
Power Dissipation-Max 4.8 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 500 V
Reverse Current-Max 1 uA
Reverse Recovery Time-Max 0.001 us
Reverse Test Voltage 600 V
Sub Category Rectifier Diodes
Surface Mount NO
Technology AVALANCHE
Terminal Finish BRIGHT TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 5
会社名称Gi Technology Private Limited,
設立2006
所在地C-9 Thiru-vi-ka Industrial Estate, Guindy, Chennai, Tamil Nadu 600032, India
URLhttp://www.gitechnology.in/

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