1N4006 Gi

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1N4006 の詳細情報

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型番1N4006
メーカーGI
Additional Feature FORMED LEAD OPTIONS ARE AVAILABLE
Application EFFICIENCY
Breakdown Voltage-Min 800 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V
JEDEC-95 Code DO-15
JESD-30 Code E-LALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 20 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 125 Cel
Operating Temperature-Min -65 Cel
Output Current-Max 1 A
Package Body Material GLASS
Package Shape ELLIPTICAL
Package Style LONG FORM Meter
Peak Reflow Temperature (Cel) 240
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 0.2 uA
Reverse Recovery Time-Max 1 us
Reverse Test Voltage 800 V
Sub Category Rectifier Diodes
Surface Mount NO
Technology SCHOTTKY
Terminal Finish BRIGHT TIN
Terminal Form C BEND
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 5
会社名称Gi Technology Private Limited,
設立2006
所在地C-9 Thiru-vi-ka Industrial Estate, Guindy, Chennai, Tamil Nadu 600032, India
URLhttp://www.gitechnology.in/

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