| 型番 | FHX35LP | 
|---|---|
| メーカー | FUJITSU | 
| データシート | ![]()  | 
| Additional Feature | LOW NOISE, HIGH RELIABILITY | 
| Case Connection | SOURCE | 
| Configuration | SINGLE | 
| DS Breakdown Voltage-Min | 4 V | 
| FET Technology | HIGH ELECTRON MOBILITY | 
| Highest Frequency Band | KU BAND | 
| JESD-30 Code | O-CRDB-F4 | 
| Number of Elements | 1 | 
| Number of Terminals | 4 | 
| Operating Mode | DEPLETION MODE | 
| Operating Temperature-Max | 150 Cel | 
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | 
| Package Shape | ROUND | 
| Package Style | DISK BUTTON Meter | 
| Polarity/Channel Type | N-CHANNEL | 
| Power Dissipation Ambient-Max | 0.29 W | 
| Power Gain-Min (Gp) | 8.5 dB | 
| Qualification Status | Not Qualified | 
| Sub Category | FET RF Small Signal | 
| Surface Mount | YES | 
| Terminal Form | FLAT | 
| Terminal Position | RADIAL | 
| Transistor Application | AMPLIFIER | 
| Transistor Element Material | SILICON | 
| 会社名称 | 富士通株式会社 | 
|---|---|
| 設立 | 1935年6月20日 | 
| 資本金 | 3,246億円 | 
| 所在地 | 105-7123 東京都港区東新橋1-5-2 汐留シティセンター | 
| URL | http://www.fujitsu.com/ | 
FHX35LP - FUJITSU の商品詳細ページです。