型番 | FMV06N90E |
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メーカー | FUJI ELE |
Avalanche Energy Rating (Eas) | 323.6 mJ |
Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 900 V |
Drain Current-Max (ID) | 6 A |
Drain-source On Resistance-Max | 2.5 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 24 A |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | 富士電機株式会社 |
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設立 | 1923年8月29日 |
資本金 | 47,586,067,310円 |
所在地 | 141-0032 東京都品川区大崎一丁目11番2号 |
URL | http://www.fujielectric.com/ |
FMV06N90E - FUJI ELE の商品詳細ページです。