型番 | FMA19N60E |
---|---|
メーカー | FUJI ELE |
Avalanche Energy Rating (Eas) | 799 mJ |
Case Connection | ISOLATED |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 19 A |
Drain-source On Resistance-Max | 0.365 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 76 A |
Qualification Status | Not Qualified |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | 富士電機株式会社 |
---|---|
設立 | 1923年8月29日 |
資本金 | 47,586,067,310円 |
所在地 | 141-0032 東京都品川区大崎一丁目11番2号 |
URL | http://www.fujielectric.com/ |
FMA19N60E - FUJI ELE の商品詳細ページです。