| 型番 | F5033 |
|---|---|
| メーカー | FUJI ELE |
| Configuration | SEPARATE, 2 ELEMENTS |
| DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (Abs) (ID) | 1 A |
| Drain Current-Max (ID) | 1 A |
| Drain-source On Resistance-Max | 0.6 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.5 W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | 富士電機株式会社 |
|---|---|
| 設立 | 1923年8月29日 |
| 資本金 | 47,586,067,310円 |
| 所在地 | 141-0032 東京都品川区大崎一丁目11番2号 |
| URL | http://www.fujielectric.com/ |
F5033 - FUJI ELE の商品詳細ページです。