Nチャネル電界効果型トランジスタ
型番 | 2SK201801L |
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メーカー | FUJI ELE |
種別 | Nチャネル トランジスタ |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 10 A |
Drain Current-Max (ID) | 10 A |
Drain-source On Resistance-Max | 0.16 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 20 W |
Power Dissipation-Max (Abs) | 20 W |
Pulsed Drain Current-Max (IDM) | 40 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 225 ns |
Turn-on Time-Max (ton) | 45 ns |
会社名称 | 富士電機株式会社 |
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設立 | 1923年8月29日 |
資本金 | 47,586,067,310円 |
所在地 | 141-0032 東京都品川区大崎一丁目11番2号 |
URL | http://www.fujielectric.com/ |
2SK201801L - FUJI ELE の商品詳細ページです。