









Pチャネル電界効果型トランジスタ
| 型番 | 2SJ475-01 |
|---|---|
| メーカー | FUJI ELE |
| 種別 | Pチャネル トランジスタ |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 325.9 mJ |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 25 A |
| Drain Current-Max (ID) | 25 A |
| Drain-source On Resistance-Max | 0.11 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 50 W |
| Power Dissipation-Max (Abs) | 50 W |
| Pulsed Drain Current-Max (IDM) | 100 A |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 430 ns |
| Turn-on Time-Max (ton) | 145 ns |
| 会社名称 | 富士電機株式会社 |
|---|---|
| 設立 | 1923年8月29日 |
| 資本金 | 47,586,067,310円 |
| 所在地 | 141-0032 東京都品川区大崎一丁目11番2号 |
| URL | http://www.fujielectric.com/ |
2SJ475-01 - FUJI ELE の商品詳細ページです。