MRF6S19060NR1 データシート Freescale

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MRF6S19060NR1 の詳細情報

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型番MRF6S19060NR1
メーカーFREESCALE
データシートProduct_list_pdf
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 68 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JEDEC-95 Code TO-270
JESD-30 Code R-PDFP-F4
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLATPACK Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
会社名称Freescale Semiconductor, Inc.
所在地6501 William Cannon Drive West Austin, Texas 78735,USA
URLhttp://www.freescale.com/

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