| 型番 | SFM9110TF |
|---|---|
| メーカー | FAIRCHILD |
| データシート | ![]() |
| Avalanche Energy Rating (Eas) | 53 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (Abs) (ID) | 1 A |
| Drain Current-Max (ID) | 1 A |
| Drain-source On Resistance-Max | 1.2 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 250 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.52 W |
| Pulsed Drain Current-Max (IDM) | 8 A |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Fairchild Semiconductor Corporation |
|---|---|
| 設立 | 1957 |
| 所在地 | 3030 Orchard Parkway San Jose, CA 95134 United States |
| URL | http://www.fairchildsemi.com/ |
SFM9110TF - FAIRCHILD の商品詳細ページです。