RFP4N100 データシート Fairchild

RFP4N100 - FAIRCHILD の商品詳細ページです。

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RFP4N100 の詳細情報

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型番RFP4N100
メーカーFAIRCHILD
データシートProduct_list_pdf
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (Abs) (ID) 4.3 A
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 3.5 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 17 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 80 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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