RFD8P05 データシート Fairchild

RFD8P05 - FAIRCHILD の商品詳細ページです。

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RFD8P05 の詳細情報

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型番RFD8P05
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature MEGAFET
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (Abs) (ID) 8 A
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.3 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 48 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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