MTD3055V Fairchild

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MTD3055V の詳細情報

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型番MTD3055V
メーカーFAIRCHILD
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 72 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 12 A
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.15 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 48 W
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 70 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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