HGTP3N60A4D データシート Fairchild

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HGTP3N60A4D の詳細情報

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型番HGTP3N60A4D
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 17 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 100 ns
Gate-emitter Thr Voltage-Max 7 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 17.5 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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