HGTP20N35G3VL データシート Fairchild

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HGTP20N35G3VL の詳細情報

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型番HGTP20N35G3VL
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature VOLTAGE CLAMPING
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-emitter Voltage-Max 320 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-emitter Thr Voltage-Max 2.3 V
Gate-emitter Voltage-Max 10 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 15000 ns
VCEsat-Max 2.8 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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