HGTP10N120BN データシート Fairchild

HGTP10N120BN - FAIRCHILD の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

HGTP10N120BN の詳細情報

  • 仕様・詳細
  • メーカー情報
型番HGTP10N120BN
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 35 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 140 ns
Gate-emitter Thr Voltage-Max 6.8 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 198 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 450 ns
Turn-off Time-Nom (toff) 190 ns
Turn-on Time-Max (ton) 40 ns
Turn-on Time-Nom (ton) 21 ns
VCEsat-Max 4.2 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

HGTP10N120BNのレビュー

HGTP10N120BN のご注文について