HGTD1N120BNS9A データシート Fairchild

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HGTD1N120BNS9A の詳細情報

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型番HGTD1N120BNS9A
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Case Connection COLLECTOR
Collector Current-Max (IC) 5.3 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 300 ns
Gate-emitter Thr Voltage-Max 7.1 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Rise Time-Max (tr) 14 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 458 ns
Turn-off Time-Nom (toff) 75 ns
Turn-on Time-Max (ton) 32 ns
Turn-on Time-Nom (ton) 13 ns
VCEsat-Max 2.9 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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