HGT1S2N120CN データシート Fairchild

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HGT1S2N120CN の詳細情報

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型番HGT1S2N120CN
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 2 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 320 ns
Gate-emitter Thr Voltage-Max 6.7 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 585 ns
Turn-on Time-Nom (ton) 32 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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