HGT1S20N35G3VLS データシート Fairchild

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HGT1S20N35G3VLS の詳細情報

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型番HGT1S20N35G3VLS
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature VOLTAGE CLAMPING
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-emitter Voltage-Max 320 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-emitter Thr Voltage-Max 2.3 V
Gate-emitter Voltage-Max 10 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 15000 ns
VCEsat-Max 2.8 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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