HGT1S14N36G3VLT データシート Fairchild

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HGT1S14N36G3VLT の詳細情報

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型番HGT1S14N36G3VLT
メーカーFAIRCHILD
データシートProduct_list_pdf
Case Connection COLLECTOR
Collector Current-Max (IC) 18 A
Collector-emitter Voltage-Max 350 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-emitter Thr Voltage-Max 2.2 V
Gate-emitter Voltage-Max 12 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 7000 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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