HGT1S12N60A4DS データシート Fairchild

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HGT1S12N60A4DS
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HGT1S12N60A4DS の詳細情報

  • 仕様・詳細
  • メーカー情報
型番HGT1S12N60A4DS
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 54 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 18 ns
Gate-emitter Thr Voltage-Max 5.6 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified
Rise Time-Max (tr) 8 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 265 ns
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 33 ns
VCEsat-Max 2.7 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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