型番 | HGT1S12N60A4DS |
---|---|
メーカー | FAIRCHILD |
データシート | ![]() |
Additional Feature | LOW CONDUCTION LOSS |
Case Connection | COLLECTOR |
Collector Current-Max (IC) | 54 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Fall Time-Max (tf) | 18 ns |
Gate-emitter Thr Voltage-Max | 5.6 V |
Gate-emitter Voltage-Max | 20 V |
JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 167 W |
Qualification Status | Not Qualified |
Rise Time-Max (tr) | 8 ns |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | MOTOR CONTROL |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 265 ns |
Turn-off Time-Nom (toff) | 180 ns |
Turn-on Time-Nom (ton) | 33 ns |
VCEsat-Max | 2.7 V |
会社名称 | Fairchild Semiconductor Corporation |
---|---|
設立 | 1957 |
所在地 | 3030 Orchard Parkway San Jose, CA 95134 United States |
URL | http://www.fairchildsemi.com/ |
HGT1S12N60A4DS - FAIRCHILD の商品詳細ページです。