HGT1S10N120BNST データシート Fairchild

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HGT1S10N120BNST の詳細情報

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型番HGT1S10N120BNST
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 35 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 200 ns
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 450 ns
Turn-off Time-Nom (toff) 330 ns
Turn-on Time-Max (ton) 40 ns
Turn-on Time-Nom (ton) 32 ns
VCEsat-Max 4.2 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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