FQI12N60CTU データシート Fairchild

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FQI12N60CTU の詳細情報

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型番FQI12N60CTU
メーカーFAIRCHILD
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 870 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 12 A
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.65 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 225 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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