FQB6N70
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FQB6N70 の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | FQB6N70 |
|---|---|
| メーカー | FAIRCHILD |
| Avalanche Energy Rating (Eas) | 600 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 700 V |
| Drain Current-Max (Abs) (ID) | 6.2 A |
| Drain Current-Max (ID) | 6.2 A |
| Drain-source On Resistance-Max | 1.5 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 142 W |
| Pulsed Drain Current-Max (IDM) | 24.8 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Fairchild Semiconductor Corporation |
|---|---|
| 設立 | 1957 |
| 所在地 | 3030 Orchard Parkway San Jose, CA 95134 United States |
| URL | http://www.fairchildsemi.com/ |
FQB6N70のレビュー
FQB6N70 のご注文について
050-3612-7934
045-263-9989
FQB6N70 - FAIRCHILD の商品詳細ページです。