FQA47P06 データシート Fairchild

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FQA47P06 の詳細情報

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型番FQA47P06
メーカーFAIRCHILD
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 820 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 55 A
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.026 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-276AB
JESD-30 Code R-CBCC-N3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 220 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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