FGB20N6S2D データシート Fairchild

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FGB20N6S2D の詳細情報

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型番FGB20N6S2D
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 28 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 105 ns
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 205 ns
Turn-on Time-Nom (ton) 11.5 ns
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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