FDZ7064N - FAIRCHILD の商品詳細ページです。

1
No Image
2営業日以内に回答いたします

FDZ7064N の詳細情報

  • 仕様・詳細
  • メーカー情報
型番FDZ7064N
メーカーFAIRCHILD
データシートProduct_list_pdf
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 16 A
Drain Current-Max (ID) 13.5 A
Drain-source On Resistance-Max 0.007 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBGA-B30
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 30
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

FDZ7064Nのレビュー

FDZ7064N のご注文について