FDZ2553N データシート Fairchild

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FDZ2553N の詳細情報

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型番FDZ2553N
メーカーFAIRCHILD
データシートProduct_list_pdf
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 9.6 A
Drain Current-Max (ID) 9.6 A
Drain-source On Resistance-Max 0.014 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBGA-B18
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 18
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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