型番 | FDZ202P |
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メーカー | FAIRCHILD |
データシート | ![]() |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (Abs) (ID) | 5.5 A |
Drain Current-Max (ID) | 5.5 A |
Drain-source On Resistance-Max | 0.045 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PBGA-B12 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 12 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY Meter |
Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 2.7 W |
Pulsed Drain Current-Max (IDM) | 20 A |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | TIN LEAD |
Terminal Form | BALL |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | Fairchild Semiconductor Corporation |
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設立 | 1957 |
所在地 | 3030 Orchard Parkway San Jose, CA 95134 United States |
URL | http://www.fairchildsemi.com/ |
FDZ202P - FAIRCHILD の商品詳細ページです。