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FDMC86160ET100
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FDMC86160ET100 の詳細情報
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| 型番 | FDMC86160ET100 |
|---|---|
| メーカー | FAIRCHILD |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 181 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 9 A |
| Drain-source On Resistance-Max | 0.014 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MO-240BA |
| JESD-30 Code | S-PDSO-N5 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Operating Temperature-Min | -55 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 204 A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Fairchild Semiconductor Corporation |
|---|---|
| 設立 | 1957 |
| 所在地 | 3030 Orchard Parkway San Jose, CA 95134 United States |
| URL | http://www.fairchildsemi.com/ |
FDMC86160ET100のレビュー
FDMC86160ET100 のご注文について
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045-263-9989
FDMC86160ET100 - FAIRCHILD の商品詳細ページです。