FDM606P - FAIRCHILD の商品詳細ページです。

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FDM606P の詳細情報

  • 仕様・詳細
  • メーカー情報
型番FDM606P
メーカーFAIRCHILD
データシートProduct_list_pdf
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 6.8 A
Drain Current-Max (ID) 6.8 A
Drain-source On Resistance-Max 0.03 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PQSO-N10
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 10
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.92 W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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